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The indium solubility in gallium is low, ~0.3 mol %, (gallium-based α solid solution), and the solubility of gallium in indium is ~2.2 mol % (indium-based β solid …
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WebEutectic gallium-indium (EGaIn) alloy is a kind of liquid metal and has attracted much attention due to good properties. In order to satisfy the trend of …
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Materials Science. Gallium–indium eutectic (eGaIn) is a liquid metal being explored in a number of applications because of its high thermal/electrical conductivity …
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Room-temperature liquid metal alloys encompass a highly versatile family of materials possessing a unique set of chemical, electronic, biological, and mechanical properties. The surface oxide of liquid metals has a direct influence on these properties and is often composed of one of the major alloy components (i.e., gallium or indium). …
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Gallium (Ga), indium (In), and thallium (Tl) are emerging soil contaminants. Profile distribution of total content and available form as well as assessing the contamination degree of these elements in highly-weathered soils have not been studied. Consequently, the aim of this study was to determine the distribution of total (HF-digestion) and ...
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The superconductor was first discovered in liquid metal Hg. Since then, the researches about superconductors have mainly focused on solid materials, instead of the liquid metal alloys. Recently, the gallium–indium–tin (Ga-In-Sn) liquid alloy was found to exhibit superconducting properties at low temperatures. In this work, the superconducting …
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Liquid metals (e.g., eutectic gallium indium and Galinstan) are emerging as outstanding materials for interconnects and wirings in that they can theoretically deform indefinitely without conductivity degradation thanks to their excellent electrical conductivity (~3.4 × 10 4 S cm −1) and intrinsic fluidic nature (Chen et al., 2020; Kazem et ...
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Gallium is deemed to be a critical mineral given its irreplaceable use in consumer electronics and clean energy technologies. China has become a significant consumer of gallium while also playing a leading role in global gallium production, accounting for more than 90% of the world's primary output in recent years. However, the quantification and …
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Gallium antimonide (GaSb) is a semiconductor made of antimony and gallium belonging to the III to V semiconductor family. The lattice constant of GaSb is 0.61 nm. The unique lattice structure of GaSb enables its use in sophisticated semiconductor applications. For example, researchers at the Centre for Quantum Devices, Northwestern University ...
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Gallium arsenide has a similar structure to silicon and is a useful silicon substitute for the electronics industry. It is an important component of many semiconductors. It is also used in red LEDs (light emitting diodes) because of its ability to convert electricity to light. Solar panels on the Mars Exploration Rover contained gallium arsenide.
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The team said it has grown aluminum indium phosphide (AlInP) and aluminum gallium indium phosphide (AlGaInP) in a hydride vapor phase epitaxy reactor. Referring to the groups of the periodic table in which such materials are found, III-V solar cells are commonly used in space applications, such as powering satellites or on the …
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Properties and Periodic Trends. These elements are found in Group 13 (XIII) of the p block in the Periodic Table of Elements. Aluminum, gallium, indium, and thallium are metallic. They each have three electrons in their outermost shell (a full s orbital and one electron in the p orbital) with the valence electron configuration ns 2 np 1.
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Two important GaLMs are eutectic gallium–indium alloy (EGaIn, 75% Ga and 25% In by weight, melting point: 15.5 °C) and eutectic gallium–indium–tin alloy (GaInSn or Galinstan, ...
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7 Altmetric. Metrics. Abstract. Nanoparticles made of non-noble metals such as gallium have recently attracted significant attention due to promising applications in UV plasmonics. To date,...
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Semantic Scholar extracted view of "DONOR-ACCEPTOR COMPLEXES OF TRIMETHYLALUMINIUM, -GALLIUM, AND -INDIUM WITH CHALCOGEN IONS" by K.-H. Von Dahlen et al. Skip to search form Skip to main content Skip to account menu. Semantic Scholar's Logo. Search 215,051,277 papers from all fields of science. Search ...
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The two most popular examples are eutectic gallium‐indium (EGaIn, 75 wt% gallium and 25 wt% indium) with a melting point of 15.7 °C and Galinstan (a eutectic typically composed of 68 wt% of gallium, 22 wt% of indium and 10 wt% of tin) with a melting point of ≈11 °C. We note that the melting point of Galinstan is often reported at …
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The European Union likewise identified gallium as a "strategic raw material" and in recent years has upgraded its supply risk assessment, citing "higher global production concentration in China."[17] The Japanese government has listed gallium as one of thirty-five minerals important to its national security.[18]
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A robust and relatively compact calibration-free thermometric technique using diode lasers two-line atomic fluorescence (TLAF) for reactive flows at atmospheric pressures is investigated. TLAF temperature measurements were conducted using indium and, for the first time, gallium atoms as temperature markers. The temperature was measured in a …
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The indium and thallium were obtained from American Smelting and Refining Co., and had stated purities of 99-995 per cent. The measurements of indium melting points were made previously.(10) The gallium was from Chemical Commerce …
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The optimal thickness of the gallium target is 6.2 μm when the incident electron beam energy is 50 keV and the optimal thickness of the indium target and the tin target was 4 μm. The X-ray conversion efficiency of the gallium target was 44.28% higher than that of the silver target as well as the ratio of X-ray count with the K lines to total ...
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Gallium Indium eutectic. PubChem CID. 16213646. Structure. Molecular Formula. GaIn; Synonyms. MFCD00144387 ; 3 ; Gallium Indium eutectic ; gallium;indium ; gallium-indium eu-tectic ; View More... Molecular Weight. 184.541 g/mol. Computed by PubChem 2.1 (PubChem release 2021.08.13) Component Compounds. …
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Product Name Gallium Indium Tin eutectic No. : 14634 Synonyms No information available Recommended Use Laboratory chemicals. Uses advised against Food, drug, pesticide or biocidal product use. Details of the supplier of the safety data sheet Emergency Telephone Number During normal business hours (Monday-Friday, 8am-7pm …
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The cell used aluminum indium phosphide (AlInP) deposited on gallium arsenide (GaAs) solar cells for the first time in D-HVPE. This result is remarkable because historically the use of aluminum in III-V cells grown via HVPE had been considered impossible. ... That cell was made using layers of GaAs and gallium indium phosphide …
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Introduction Gallium is utilized for the production of several semiconductors, including gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), gallium antimonide (GaSb) and copper indium gallium selenide (CIGS). 1–5 These materials are all indispensable for the electric and electronic equipment industry. More particularly, they …
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1. Introduction The chemistry of the heavier group 13 elements aluminum, gallium and indium has been dominated by their use as neutral Lewis acid salts in a variety of organic transformations such as Friedel–Crafts, aldol, cycloisomerization 1 and Diels–Alder reactions. 2 The synthesis of discrete group 13 complexes supported by appropriately …
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Eutectic gallium-indium (EGaIn) alloy has attracted many researchers' interest because of its distinctive material properties. The alloy (75% wt Ga, 25% wt In), which is liquid at room temperature due to low melting point (15.7 °C) [], is nontoxic and inherently flexible/stretchable, has good thermal conductivity (26.6 W m −1 K −1) and high …
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In this study, the effects of helium (He) plasma treatment on amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been investigated.The He plasma treatment induced a dramatic decrease of the resistivity in a-IGZO thin films from 1.25 × 10 6 to 5.93 mΩ cm. After 5 min He plasma treatment, the a-IGZO films showed an …
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Ga 30 In 70 alloy was prepared by melting and mixing 14 g of indium and 6 g of gallium at 400 K. Ga-In-Sn alloy was prepared by melting and mixing 4 g of gallium, 9 g of indium, and 7 g of tin at 400 K. We used a probe sonication system (200 W) to comminute the alloys into NPs. ... Nature, 483 (2012), pp. 421-427. CrossRef View in …
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Combining liquid fluidity and metallic conductivity, gallium–indium (Ga–In) alloys are making a splash in areas such as stretchable electronic circuits and wearable …
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Abstract. This work discusses the attributes, fabrication methods, and applications of gallium-based liquid metal particles. …
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